Surface electronic structure studies of GaAs (110)

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Abstract
Angle‐resolved photoemission using synchrotron radiation from GaAs (110) has been studied in conjunction with tight binding calculations of the surfaceelectronic structure. Emission from two new surface resonances−which were predicted to exist only for a relaxed surface‐have been identified near the edges of the surfaceBrillouin zone at ? and ?′. Also, measurements of the dispersion of the As‐derived surface state near the valence band maximum, first reported elsewhere, have been extended from ? to the zone edge ? and a band width of 0.6 eV has been determined. All of these observations, including those reported elsewhere of intrinsic surface states on GaAs (110) are accounted for by a tight binding model calculation for a relaxed surface (∠19° bond angle rotation).

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