A drift free nernstian iridium oxide pH sensor
- 19 June 1997
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1367-1370
- https://doi.org/10.1109/sensor.1997.635491
Abstract
A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurementKeywords
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