Dielectric function in HgTe between 8 and 300°K
- 15 January 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 9 (2) , 517-526
- https://doi.org/10.1103/physrevb.9.517
Abstract
Reflectivity spectra of HgTe were measured in the spectral region from 80 to 600 at temperatures between 8 and 300°K. The wave numbers of the transverse-optical phonon and longitudinal-optical phonon at 8°K were determined. The total dielectric function including the interband contribution was analyzed. Plasmon-phonon dispersion diagrams were obtained. The theoretical analysis is compared with experimental results at all temperatures. Possible consequences of the adiabatic approximation breaking down in zero-gap semiconductors is examined. A new low-frequency mode is reported, its temperature dependence is given, and its origin is discussed from physicochemical arguments.
Keywords
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