Surface-state density and surface potential in MIS capacitors by surface photovoltage measurements. II

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Abstract
This paper describes a surface photovoltage method which is complementary to the one reported in part I. The present method relies on the fact that a change in illumination level causes a change in electron occupancy of some of the surface states. It involves only moderate light intensity and yields results for the surface-state density from the slope of the surface-photovoltage against log-of-light-intensity curve. The limits of surface potential within which the method is valid as well as the range of surface-state densities measurable will be examined. Results are presented and are compared with those obtained by other methods. The possible advantage in measurements at low temperatures is also discussed.