A Novel GaAs FET Oscillator with Low Phase Noise
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 85 (0149645X) , 257-260
- https://doi.org/10.1109/mwsym.1985.1131956
Abstract
A novel GaAs FET oscillator circuit is presented. This circuit is capable of reducing phase noise up to 20 db. A source-coupled pair of GaAs FETs has a balanced characteristic which can eliminate both the reactive and resistive modulation mechanisms which upconvert l/f noise. This circuit is inherently broadband and ideal for monolithic implementations.Keywords
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