Stable 30mW operation at 50°C for strained MQW AlGaInP visible laser diodes

23 April 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (9) , 860-861
https://doi.org/10.1049/el:19920543

Abstract

High-power strained multiquantum-well (MQW) AlGaInP visible laser diodes (LDs) have been developed. Marked improvements in threshold current density and characteristic temperature have been demonstrated. Very stable 30 mW operation at 50°C for more than 1000h has been achieved for transverse-mode stabilised +0.30% lattice-mismatched MQW LDs. The operating current increase rates are less than 10⁻⁴ h⁻¹.

Keywords

OPERATING CURRENT INCREASE
ALGAINP
VISIBLE LASER DIODES
LATTICE-MISMATCHED
STRAINED MULTIQUANTUM-WELL
1000 H
THRESHOLD CURRENT DENSITY
STRAINED MQW
30 MW
CHARACTERISTIC TEMPERATURE
50 C
SEMICONDUCTORS

This publication has 1 reference indexed in Scilit:

Transverse Mode Stabilized 670Nm Atgainp Visible-Light Laser Diodes
Published by SPIE-Intl Soc Optical Eng ,1988