Junction-side up operation of (Al)GaInP lasers with very low threshold currents

30 July 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (16) , 1531-1532
https://doi.org/10.1049/el:19920972

Abstract

Strained (Al)GaInP quantum-well ridge lasers with AlGaAs cladding layers have been fabricated on a 5° -off oriented GaAs substrate. Owing to a heat spreading layer, the devices can be operated junction-side up with a CW threshold current of 13mA. Singlemode operation is achieved up to power levels of 15mW for devices with uncoated facets.

Keywords

HEAT SPREADING LAYER
13 MA
CW THRESHOLD CURRENT
UNCOATED FACETS
SEMICONDUCTOR LASERS
JUNCTION-SIDE UP OPERATION
GAAS SUBSTRATE
ALGAAS CLADDING LAYERS
(AL)GAINP LASERS
RIDGE LASERS
15 MW
SINGLE MODE OPERATION
STRAINED QUANTUM WELL
LOW THRESHOLD CURRENTS

This publication has 0 references indexed in Scilit: