Thermally induced effects in chalcogenide films. III. Diffusion and the kinetics of annealing in Ge
- 15 October 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (8) , 4560-4565
- https://doi.org/10.1103/physrevb.24.4560
Abstract
The kinetics of annealing evaporated Ge films is investigated through measurements on the optical-absorption edge. The data are found to follow a second-order rate equation. This is understood in terms of Se-atom diffusion through a process involving the excitation and diffusion of close valence-alternation pairs. The explanation is proposed to apply also to pnictide- and oxide-containing glasses and justifies the miniscule diffusion rate found in all of them.
Keywords
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