Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC

• 1 January 2001
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 353-356, 639-642
• https://doi.org/10.4028/www.scientific.net/msf.353-356.639

Abstract

Keywords

• GATE-OXIDE
• INTERFACE STATES (OR TRAPS)
• OXIDATION