Photodetectors fabricated from rapid-thermal-oxidized porous Si
- 31 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (22) , 2818-2820
- https://doi.org/10.1063/1.109220
Abstract
A metal-semiconductor-metal (MSM) photoconductor and a p-n photodiode have been fabricated from rapid-thermal-oxidized (RTO) porous Si. The MSM photoconductor achieved 2.8×higher responsivity at 350 nm than a UV-enhanced Si photodiode, and the RTO photodiode exhibited an external quantum efficiency of 75% at 740 nm.Keywords
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