20 000 h InGaAs quantum well lasers

6 December 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (25) , 2083-2084
https://doi.org/10.1049/el:19901342

Abstract

Strained-layer GRINSCH-SQW InGaAs lasers operating CW at 1.01 μm have been CW life tested to over 20 000 h while exhibiting an average degradation rate of 1.3% per kh. These uncoated lasers were life tested at 70 mW (per facet) in constant power mode at a heatsink temperature of 30°C. In addition to their longevity, these lasers exhibited a resistance to sudden failure with an unscreened sample of fifteen lasers experiencing total survival to 10 000 h.

Keywords

INGAAS QUANTUM WELL LASER
STRAINED LAYER GRINSCH-SQW LASER
CW OPERATION
GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL
30 DEGC
AVERAGE DEGRADATION RATE
1.01 MICRON
HEATSINK TEMPERATURE
SEMICONDUCTOR QUANTUM WELL
70 MW
20000 H
CONSTANT POWER MODE
CW LIFE TESTING

This publication has 1 reference indexed in Scilit:

Chapter 6 Defects in III–V Compound Semiconductors
Published by Elsevier ,1985