Minority-carrier injection into polysilicon emitters

1 June 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 29 (6) , 961-964
https://doi.org/10.1109/t-ed.1982.20814

Abstract

The hole transport equation is solved for a polysilicon emitter of a bipolar transistor. The recombination at the grain boundaries as well as at the poly-monosilicon interface is considered. An effective surface recombination velocity is defined and calculated as a function of surface state density and number of grain boundaries. A comparison between the injected hole current into the diffused region of both an Al contact and a polysilicon-silicon emitter is given as a function of surface state density for different numbers of grain boundaries. Also the injected current is calculated for different values of junction depth and surface concentration.

Keywords

This publication has 0 references indexed in Scilit: