Abstract
The thermal conductivity λ and thermoelectric figure of merit z of Bi1−xSbx films with 0 < x ≦ 0.3 and thicknesses from 30 to 400 nm are measured in the temperature range 80 to 400 K. The lattice thermal conductivity λϱ is determined from the measured total thermal conductivity λ and the calculated charge carrier contribution λe. The results are discussed in the framework of earlier proposed models for the charge carrier and phonon heat transport in polycrystalline films. The Sb‐concentrations for maximum z‐values of the films are established.