New infra-red absorption bands in hydrogen-implanted silicon
- 1 July 1979
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 72 (4-5) , 381-383
- https://doi.org/10.1016/0375-9601(79)90503-6
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975
- EPR of conduction electrons produced in silicon by hydrogen ion implantationPhysica Status Solidi (a), 1974
- Shallow donor formation in Si produced by proton bombardmentPhysica Status Solidi (a), 1973
- Electrical properties of n-type Si layers doped with proton bombardment induced shallow donorsSolid State Communications, 1972
- A Study of the Divacancy in Irradiated Silicon Using Infrared Spectroscopy and Infrared Photoconductivity MeasurementsIEEE Transactions on Nuclear Science, 1970
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969