Hall Effect, Schottky Barrier Capacitance, and Photoluminescence Spectra Measurements for GaAs Epitaxial Layer and Their Correlation
- 1 January 1974
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 121 (8) , 1066-1073
- https://doi.org/10.1149/1.2401978
Abstract
The main causes of a decrease in the electron mobility of epitaxial layers grown by the vapor phase deposition system are confirmed to be due to the compensating acceptors and the space charge regions, both of which ace associated with copper contamination, from a discussion on the correlation among the results of measurements (listed in the title) on the same samples. Deep traps do not play an important role in determining electron mobility because of their scattering cross section as small as .Keywords
This publication has 0 references indexed in Scilit: