Reduction in dislocation density in In-doped GaP LPE layers grown from indium solvent
- 1 November 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (11) , 4815-4816
- https://doi.org/10.1063/1.323502
Abstract
A reduction in dislocation density, typically by a factor of 3–8, was observed across the interface between LEC GaP (111)B substrate and an n‐type In‐doped GaP layer grown from indium solvent by liquid‐phase epitaxy. Doping of the epitaxial layer with indium contributed to the reduction in dislocation density in the epitaxial layer.This publication has 9 references indexed in Scilit:
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