Magnetoresistances in Ferromagnetic Tunnel Junctions with Pinned Layers
Open Access
- 1 January 1997
- journal article
- Published by The Magnetics Society of Japan in Journal of the Magnetics Society of Japan
- Vol. 21 (4_2) , 489-492
- https://doi.org/10.3379/jmsjmag.21.489
Abstract
Ferromagnetic tunnel junctions having naturally oxidized Al barriers were fabricated by magnetron sputtering. The junctions were patterned to 0.01 mm2 with metal masks. The tunnel resistance values varied broadly from 0.1 to 3000 ohms according to the oxidization conditions. Junctions with slightly oxidized (100 hours) AI barriers exhibited higher tunnel resistances and good stability. The Ni-Fe/Co/Al-AlOx/Co/Ni-Fe/Fe-Mn/Ni-Fe junction showed a spin-valve-like R-H property. The MR ratio was 10% for a 20 Oe magnetic field. The barrier height calculated from the I-V characteristics was 1.4 eV, and the barrier width was 1.5 nm.Keywords
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