Charge centroid and trapping model for MNOS structures
- 1 June 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6) , 2763-2764
- https://doi.org/10.1063/1.322940
Abstract
Charge centroid, trap density, and capture cross section for an MNOS structure are derived from measurements of the change in flat band voltage with varying pulse duration and temperature using the Arnett‐Yun model. The temperature dependence of these parameters suggests that the Arnett‐Yun model for the initial space‐charge buildup is not entirely valid. The observations are in qualitative agreement with partially ionized traps whose occupancy by electrons decreases with increasing temperature and electric field.This publication has 3 references indexed in Scilit:
- Electron and hole transport in CVD Si3N4 filmsApplied Physics Letters, 1975
- Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devicesApplied Physics Letters, 1975
- Measurements of charge propagation in Si3N4 filmsApplied Physics Letters, 1974