Electron emission from boron nitride coated Si field emitters
- 3 November 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (18) , 2704-2706
- https://doi.org/10.1063/1.120183
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Negative electron affinity surfaces of aluminum nitride and diamondDiamond and Related Materials, 1996
- Diamond coated Si and Mo field emitters: diamond thickness effectApplied Surface Science, 1996
- Field emission characteristics of polycrystalline and single-crystalline diamond grown on Si tipsApplied Surface Science, 1996
- Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond filmsElectronics Letters, 1993
- Optical properties of cubic boron nitride films made by a reactive ion plating methodThin Solid Films, 1993
- Growth and characterization of epitaxial cubic boron nitride films on siliconPhysical Review B, 1991
- Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor DepositionJournal of the Electrochemical Society, 1986
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979
- Preparation and Properties of Thin Film Boron NitrideJournal of the Electrochemical Society, 1968