Etch rate enhancement of silicon in CF4-O2 plasmas
- 1 June 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (11) , 1050-1052
- https://doi.org/10.1063/1.95755
Abstract
An etch rate enhancement of silicon in CF4-O2 gas mixtures in the presence of alkali metal ion hydroxide contaminants is examined. Sodium ion implanted samples show that the alkali metal ion is responsible for this effect. Other solution contamination experiments show that this effect was absent for hydroxide and chloride contaminants without an alkali metal, chlorine containing etchant gas mixtures, phosphorus-doped silicon, Si3N4, and TaSi2 substrates.Keywords
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