Punch-through currents and floating strip potentials in silicon detectors
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (1) , 267-271
- https://doi.org/10.1109/23.34447
Abstract
Punch-through currents flowing between adjacent p/sup +/ strips on the surface of silicon microstrip drift detectors have been observed. Measurements of the floating strip potential have shown that a p/sup +/ strip acquires a voltage such that the punch-through current and the leakage current are equal and opposite. The factors influencing the threshold for the punch-through effect have been compared with a simple computer model, and the predicted variation with the interstrip gap is found to be in reasonable agreement with measured values for a variety of detectors.<>Keywords
This publication has 6 references indexed in Scilit:
- A silicon drift photodiodeIEEE Transactions on Nuclear Science, 1989
- Semiconductor drift chambers for position and energy measurementsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1985
- Silicon strip detectors with capacitive charge divisionNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1985
- Semiconductor drift chamber — An application of a novel charge transport schemeNuclear Instruments and Methods in Physics Research, 1984
- Computer analysis of punch-through in MOSFETsSolid-State Electronics, 1979
- Thermionic injection and space-charge-limited current in reach-through p+np+ structuresJournal of Applied Physics, 1972