Surface recombination in dry etched AlGaAs/GaAs double heterostructure p-i-n mesa diodes
- 4 January 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (1) , 87-89
- https://doi.org/10.1063/1.108781
Abstract
We have measured the surface recombination in reactive ion etched mesas in an AlGaAs/GaAs p‐i‐n double heterostructure using the size dependence of the current density versus voltage characteristic. The recombination current is dependent on processing due to surface oxide formation. The surface recombination of the oxidized surface is independent of the crystal axis. The recombination current can be reduced by removal of the oxide and sulfur passivation which protects the surface from further oxidation.Keywords
This publication has 14 references indexed in Scilit:
- Measurement of minority-carrier lifetime by time-resolved photoluminescencePublished by Elsevier ,2002
- A contactless minority lifetime probe of heterostructures, surfaces, interfaces and bulk wafersSolid-State Electronics, 1992
- Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1992
- Evidence for surface recombination at mesa sidewalls of self-electro-optic effect devicesJournal of Applied Physics, 1990
- Orientation-dependent perimeter recombination in GaAs diodesApplied Physics Letters, 1990
- Lasing characteristics of GaAs microresonatorsApplied Physics Letters, 1989
- Optical measurement of surface recombination in InGaAs quantum well mesa structuresApplied Physics Letters, 1988
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Carrier transport in stripe-geometry Ga1−xAlxAs double heterostructure diode lasers and broad area heterojunctionsJournal of Applied Physics, 1983
- The effect of surface recombination on current in AlxGa1−xAs heterojunctionsJournal of Applied Physics, 1978