Performance of Ion-Doped Self-Aligned a-Si TFT for AMLCDs.

1 January 1993

journal article
Published by Institute of Image Information and Television Engineers in The Journal of the Institute of Television Engineers of Japan

Vol. 47 (5) , 624-629
https://doi.org/10.3169/itej1978.47.624

Abstract

The problem of pixel voltage shift for TFT-LCDs due to a gate-source capacitance coupling (C_gs) of a-Si TFT becomes more severe in high resolution LCDs. This problem can be moderated through diminishing C_gs using a self-alignment structure. The self-aligned a-Si TFT process can be simplified by using an ion-doping technique to form source/drain contact regions. The mobility of this ion-doped self-aligned a-Si TFT was 0.35 cm²/V·sec and the threshold voltage was 2.3V. The ON/OFF ratio was over 10⁶ in the dark over 10⁵ under 2000 lx light illumination. These characteristics were sufficiently stable under gate stress. The authors have developed 9-inch TFT-LCD panels with this new self-aligned a-Si TFTs. These LCDs show fairly good image. These data show that ion doping technology is very effective for improving 2-Si TFT-LCDs.

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