Structural identification of hydrogen and muonium centers in silicon: First-principles calculations of hyperfine parameters
- 5 February 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (6) , 669-672
- https://doi.org/10.1103/physrevlett.64.669
Abstract
First-principles calculations are used to evaluate the hyperfine and superhyperfine parameters for hydrogen and muonium at various sites in the Si lattice. Good agreement is found with muon-spin-rotation experiments, leading to an unambiguous identification of ‘‘anomalous muonium’’ with the bond-center site. The results establish the power and reliability of pseudopotential-spin-density-functional theory for calculating signatures of defects.Keywords
This publication has 21 references indexed in Scilit:
- Theory of structure and hyperfine properties of anomalous muonium in elemental semiconductors: Diamond, silicon, and germaniumPhysical Review B, 1989
- Theory of hydrogen diffusion and reactions in crystalline siliconPhysical Review B, 1989
- Theory of Hydrogen Diffusion and Reactions in Crystalline SiliconPhysical Review Letters, 1988
- State and motion of hydrogen in crystalline siliconPhysical Review B, 1988
- Hyperfine Structure of Anomalous Muonium in Silicon: Proof of the Bond-Centered ModelPhysical Review Letters, 1988
- Muonium states in semiconductorsReviews of Modern Physics, 1988
- Equilibrium sites and electronic structure of interstitial hydrogen in SiPhysical Review B, 1987
- Molecular radical models for the muonium centres in solidsChemical Physics Letters, 1986
- Identification of Anomalous Muonium in Semiconductors as a Vacancy-Associated CenterPhysical Review Letters, 1985
- On the change of polarization of positive muons in alkali halidesZeitschrift für Physik B Condensed Matter, 1975