Low-Current, High-Speed Magnetic Memory Array Utilizing Evaporated Matrix Wiring

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Abstract
Planar, thin film magnetic memory arrays of 4×4 and 64×24 elements have been fabricated from evaporated matrix wiring and insulating layers. Four metallic and three insulating layers were evaporated sequentially in a vacuum chamber without breaking the vacuum. The magnetic element is an electroplated ternary alloy of nickel-iron-phosphorus 0.13 mm (0.005-in.) in diameter and a few hundred Å thick. The film has an anisotropy field of about 1 Oe and switches in 10 nsec with an applied word drive current of 35 mA. Sense and cancellation lines and dummy bit lines are used to cancel interwire coupling. Disturb tests were performed with up to 104 disturb pulses being applied along the easy axis. The outputs from films with Hc/Hk≈2 were decreased by less than 10% when disturbed in this manner. An evaporated memory array made with highly inverted films may be usable as a high-speed, low-current memory storage device.

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