Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probe
- 1 November 1966
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 2 (11) , 403-405
- https://doi.org/10.1049/el:19660338
Abstract
The voltage distribution in GaAs has been measured by probing the potential along the surface of a lightly doped bulk-GaAs wafer. Using this distribution, the field dependence of the electron velocity was calculated. The mobility was found to be negative for electric fields between 3900 V/cm and approximately 7000 V/cm.Keywords
This publication has 0 references indexed in Scilit: