Properties of Liquid Silicon Observed by Time-Resolved X-Ray Absorption Spectroscopy
- 9 October 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 91 (15) , 157403
- https://doi.org/10.1103/physrevlett.91.157403
Abstract
Time-resolved x-ray spectroscopy at the Si edges is used to probe the electronic structure of an amorphous Si foil as it melts following absorption of an ultrafast laser pulse. Picosecond temporal resolution allows observation of the transient liquid phase before vaporization and before the liquid breaks up into droplets. The melting causes changes in the spectrum that match predictions of molecular dynamics and ab initio x-ray absorption codes.
Keywords
This publication has 26 references indexed in Scilit:
- Demonstration of a sub-picosecond x-ray streak cameraApplied Physics Letters, 1996
- Structural study of molten germanium by energy-dispersive X-ray diffractionJournal of Non-Crystalline Solids, 1994
- Bonding and disorder in liquid siliconPhysical Review Letters, 1989
- A neutron diffraction study on the structure of liquid germaniumJournal of Physics F: Metal Physics, 1988
- A time-resolved x-ray absorption study of amorphous Si during pulsed laser irradiationJournal of Applied Physics, 1986
- Pulsed-laser irradiated silicon studied by time-resolved x-ray absorption (90–300 eV)Physical Review Letters, 1986
- Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealingApplied Physics Letters, 1983
- Über die Struktur von Si-, Ge-, Sn- und Pb-Schmelzen / Structure of Si-, Ge-, Sn-, and Pb-meltsZeitschrift für Naturforschung A, 1979
- Structure of molten silicon and germanium by X-ray diffractionZeitschrift für Physik B Condensed Matter, 1975
- Extreme Ultraviolet Transmission of Crystalline and Amorphous SiliconPhysical Review Letters, 1972