Room-temperature observation of impurity states in bulk GaAs by photoreflectance

15 March 1989

journal article
Published by AIP Publishing in Journal of Applied Physics

Vol. 65 (6) , 2556-2557
https://doi.org/10.1063/1.342781

Abstract

Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.

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