Hydrogen passivation of visible p-i-n type thin-film light-emitting diodes
- 19 February 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (8) , 1031-1033
- https://doi.org/10.1063/1.116238
Abstract
The effects of hydrogen passivation on the performance of visible p-i-n thin-film light-emitting diodes (TFLEDs) have been investigated. The TFLEDs were fabricated using a photochemical vapor deposition method. The hydrogenation process was performed using an inductively coupled plasma system at a rf power of 800 W and a process pressure of 20 mTorr for 30 min. It was found that hydrogenation dramatically improved the performance of these TFLEDs. The threshold voltage was decreased by about 1 V, the electroluminescence (EL) peak shifted from 704.5 to 689 nm, the EL intensity increased by a factor of 3, and the brightness increased from 1 to 24 cd/m2 by 24 times.Keywords
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