Improved Silicon Thin Film Growth on Glass Substrates by Periodic Regrowth

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Abstract
The periodic regrowth technique has been used to improve the quality of polycrystalline silicon thin films grown on glass substrates from molten metal solutions. Periodically repeating the melt‐back and regrowth procedures removed the small‐grained crystals, suppressed the rapid growth of crystals perpendicular to the substrate, and enhanced the growth of slower growing crystals in the lateral direction. This process markedly improved the smoothness, grain size, crystal quality, and (111) preferred orientation of the silicon thin films.

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