The effects of light soaking on a-Si:H films containing impurities

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Abstract
A series of amorphous silicon films were grown under identical conditions in a dc glow discharge with different impurity gases added to the silane discharge atmosphere. The constant surface photovoltage technique was used to measure both the diffusion length and the space‐charge width as a function of the time exposed to 1 sun illumination. In most cases large changes were observed in the first 48 hours of light soaking with much smaller changes observed in the next 452 hours. After 500 hours of light soaking, diffusion lengths >0.24μm were observed only in films made with pure silane or with impurities such as CH4, SiH2Cl2, or SiF4 present. Films made in the presence of impurity gases such as N2, C2H4, or (SiH2)2O exhibited diffusion lengths <0.15μm after 500 hours of 1 sun illumination.

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