Impurity-induced disordering in fractional-layer growth on a (001) vicinal surface by metalorganic chemical vapor deposition
- 1 January 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (1) , 87-88
- https://doi.org/10.1063/1.102661
Abstract
(AlAs)1/2(GaAs)1/2 fractional‐layer superlattices (FLSs) are grown on a (001) GaAs substrate, tilted slightly in the [1̄10] direction using metalorganic chemical vapor deposition. The periodic structures are analyzed by x‐ray superlattice satellite diffraction. The results suggest that the step flow mode from monolayer step is a dominant crystal growth process. However, the satellite intensities drastically decrease under heavy Si impurity doping conditions (n>2×1017 cm−3), showing that impurity‐induced disordering occurs during fractional‐layer growth. The growth mechanism under impurity doping conditions is also discussed.Keywords
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