High-rate growth at low temperatures by free-jet molecular flow: Surface-reaction film-formation technology
- 4 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (14) , 1173-1175
- https://doi.org/10.1063/1.99196
Abstract
Surface-reaction film-formation technology of epitaxial Si and polcrystalline silicon using free-jet molecular flow is proposed. High-rate (∼0.5 μm/min or higher) growth of homoepitaxial Si films with high crystallographic perfection has been achieved at temperatures as low as 600 °C without the chemical by-product deposition on the inner surface of the reaction chamber. This result also implies that this system has the cleaning-free function. The film-formation mechanism appears to be dominated by the chemical reaction on the substrate surface without the vapor phase reaction.Keywords
This publication has 1 reference indexed in Scilit:
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970