Sputtering systems with magnetically enhanced ionization for ion plating of TiN films

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Abstract
The reactive sputtering of hard coatings as TiN in large distances and/or on large substrates is difficult to perform with the conventional magnetron. A strong magnetic confinement of plasma between the magnetron target and substrates enhances the gas ionization and raises the ion current I s extracted to substrates. A new sputtering system with a multipolar magnetic plasma confinement (MMPC) is described. It consists of a planar unbalanced magnetron (UM), with diameter 120 mm equipped with two magnetic coils, and coupled to a closed multipolar magnetic field formed by a set of permanent magnets located on the internal surfaces of the deposition chamber. Typical operation characteristics of the new sputtering system are presented. It can be operated in a wide range of pressure from 5 to 0.02 Pa. The influence of different magnetic field configurations on I s and on the floating potential U fl of substrates is also reported and compared with the characteristics of the UM without the multipolar field. Operation characteristics favorable for ion plating are observed. Ion current densities i s on substrates exceed 2 mA/cm2 even at negative bias U s below 60 V and on substrates placed in large distances as 200 mm from the target. The floating potential U fl of substrates ranges from −5 to −50 V. Under these conditions are deposited dense golden TiN films with stresses as low as 2 to 3 GPa.

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