Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies

1 February 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 18 (2) , 97-104
https://doi.org/10.1109/T-ED.1971.17156

Abstract

The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured and calculated noise parameters show good agreement in the frequency range 2-8 GHz.

Keywords

FIELD EFFECT TRANSISTOR
ACOUSTICAL ENGINEERING
LOW FREQUENCY NOISE
EQUIVALENT CIRCUITS
EQUIVALENT CIRCUIT
SCHOTTKY BARRIER