Measurement of local stress in silicon nitride films grown by plasma-enhanced chemical vapor deposition using micro-Raman spectroscopy
- 26 August 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9) , 1066-1068
- https://doi.org/10.1063/1.106346
Abstract
This letter presents the first attempt to use micro‐Raman spectroscopy to evaluate the local stress in silicon nitride films deposited by plasma‐enhanced chemical vapor deposition. The frequency of the Si‐H stretching mode in IR absorption of the films increases linearly with increasing compressive film stress [3.6 (cm−1)/109 (dyn/cm2)]. In micro‐Raman spectra, the film with a higher compressive stress shows a higher frequency shift. Micro‐Raman spectroscopy was applied to determine the local stress in patterned structures. It is found that the silicon nitride film deposited over trench structures shows a higher local stress at the top corner.Keywords
This publication has 2 references indexed in Scilit:
- Physical‐Electrical Properties of Silicon Nitride Deposited by PECVD on III–V SemiconductorsJournal of the Electrochemical Society, 1990
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978