Electronic Structures of Si-Based Manmade Crystals
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S)
- https://doi.org/10.1143/jjap.32.384
Abstract
Electronic structures have been calculated for Si-based manmade crystals with homogeneous strain using a tight-binding sp3s* model. Interesting properties, such as direct transition and pseudonarrow bandgap, appear especially in crystals where two monolayers of non-Si atoms are stacked in many layers of Si atoms along the (111) orientation.Keywords
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