Fatigue of organometallic chemical vapor deposited PbZrxTi1−xO3 thin films with Ru/Ruo2 and Pt/Pt electrodes
- 1 July 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 263 (2) , 221-230
- https://doi.org/10.1016/0040-6090(95)06576-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigueApplied Physics Letters, 1994
- Electrochemical models of failure in oxide perovskitesIntegrated Ferroelectrics, 1993
- Ferroelectrics and high permittivity dielectrics for memory applicationsMicroelectronic Engineering, 1993
- Conducting oxide electrodes for ferroelectric filmsIntegrated Ferroelectrics, 1993
- Fatigue of ferroelectric PbZrxTiyO3 capacitors with Ru and RuOx electrodesJournal of Materials Research, 1993
- Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructuresApplied Physics Letters, 1992
- Preparation and ferroelectric properties of PbZr0.53Ti0.47O3 thin films by spin coating and metalorganic decompositionJournal of Applied Physics, 1991
- Quantitative measurement of space-charge effects in lead zirconate-titanate memoriesJournal of Applied Physics, 1991
- Charge motion in ferroelectric thin filmsFerroelectrics, 1991
- Fatigue and switching in ferroelectric memories: Theory and experimentJournal of Applied Physics, 1990