Current fluctuations in double-barrier quantum well resonant tunneling diodes

Publisher Website
Google Scholar
Abstract
The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Al0.3Ga0.7As barriers. The frequency range covered is 1 Hz–100 kHz and the temperature range is 78–400 K. The noise spectra are decomposed in a 1/f part, resulting in the magnitude of the 1/f noise, and contributions due to carrier trapping, resulting in the activation energies of the traps. It is found that a reduction of the Al content in the barrier material reduces the number of traps and further that the magnitude of the 1/f noise is practically independent of the temperature and of the Al content of the barrier.