A Ka-band GaAs monolithic phase shifter
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (12) , 1855-1861
- https://doi.org/10.1109/t-ed.1983.21461
Abstract
The design and performance of a GaAs monolithic 180° one-bit switched line phase shifter test circuit forKa-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.Keywords
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