Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4) , 348-350
- https://doi.org/10.1063/1.95265
Abstract
We report the first room-temperature pulsed oscillation of a GaAlAs/GaAs surface emitting injection laser. A ring electrode of which the outer/inner diameter is 20 μm/10 μm has been introduced to distinguish a mirror and Ohmic contact in order to increase the reflectivity. The threshold current was as low as 510 mA at room temperature under pulsed conditions. The cavity length was 7 μm and single longitudinal mode operation was achieved at λ=8740 Å against the temperature variation of 80 K.Keywords
This publication has 3 references indexed in Scilit:
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