A DC-12 GHz monolithic GaAsFET distributed amplifier
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (7) , 1065-1071
- https://doi.org/10.1109/t-ed.1982.20835
Abstract
A monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated. This amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 × 0.97-mm die. Its gain versus frequency is very flat, and |S11|, |S12|, and |S22| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.Keywords
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