Fabrication process and properties of InGaAs wires having Si interface control layers for removal of Fermi level pinning
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 60-61, 702-709
- https://doi.org/10.1016/0169-4332(92)90500-w
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 11 references indexed in Scilit:
- Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si LayersJapanese Journal of Applied Physics, 1991
- Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPEJournal of Crystal Growth, 1991
- Characterization of InGaAs surface passivation structure having an ultrathin Si interface control layerJournal of Vacuum Science & Technology B, 1990
- Performance of a Focused-Ion-Beam Implanter with Tilt-Writing FunctionJapanese Journal of Applied Physics, 1989
- GaAs and In0.53Ga0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBEJapanese Journal of Applied Physics, 1988
- Scaling laws and minimum threshold currents for quantum-confined semiconductor lasersApplied Physics Letters, 1988
- Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfacesJournal of Vacuum Science & Technology B, 1986
- Theoretical Gain of Quantum-Well Wire LasersJapanese Journal of Applied Physics, 1985
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980
- Generation of periodic surface corrugationsApplied Optics, 1978