Carrier recombination in germanium as a function of temperature between 100°K and 550°K
- 1 January 1959
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 8, 78-80
- https://doi.org/10.1016/0022-3697(59)90278-1
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Lifetime in-Type SiliconPhysical Review B, 1958
- Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge ConditionsPhysical Review B, 1958
- Theory of the Photomagnetoelectric Effect in SemiconductorsPhysical Review B, 1956
- Lifetime of Electrons in-Type SiliconPhysical Review B, 1955
- Effect of Nickel and Copper Impurities on the Recombination of Holes and Electrons in GermaniumThe Journal of Physical Chemistry, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952