PbTiO3 films were prepared by rf magnetron sputtering at relatively low temperature (200–300°C) and subsequent annealhig The composition of the sputtered films was investigated in detail and was found to strongly depend on the sputtering gas (Ar-10%O2) pressure. The films fabricated at about 4 Pa had stoichiometry and a perovskite structure under a wide annealing temperature range. Under these conditions, epitaxial growth of PbTiO3 film on SrTiO3 single crystal was attempted. From RHEED patterns and transmission electron micrographs, it was confirmed that epitaxial films with high crystalline quality were obtained.