The effects of high uniaxial stress on the far infra-red impurity spectra of high purity n- and p-type silicon
- 1 April 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 26 (1) , 11-15
- https://doi.org/10.1016/0038-1098(78)90997-3
Abstract
No abstract availableKeywords
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