Energy dependence of the secondary ion yield of metals and semiconductors
- 31 December 1975
- journal article
- Published by Elsevier in Surface Science
- Vol. 53 (1) , 626-635
- https://doi.org/10.1016/0039-6028(75)90159-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Effets comparés de l'oxygène sur l'émission ionique et le potentiel de surface des métauxSurface Science, 1973
- A quantum-mechanical model for the ionization and excitation of atoms during sputteringSurface Science, 1973
- Binding energies in cubic metal surfacesRadiation Effects, 1973
- Theoretical models in secondary ionic emissionRadiation Effects, 1973
- Sputtering of solicon and germanium by middle-energy heavy ionsPhysics Letters A, 1972
- Émission ionique secondaire des alliages cuivre-aluminium en présence d'oxygèneJournal de Physique, 1971
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- Distributions énergétique et angulaire de l'émission ionique secondaire. III. Distribution angulaire et rendements ioniquesJournal de Physique, 1968
- Distributions énergétique et angulaire de l'émission ionique secondaire. II. Nature et distribution énergétique des ions secondairesJournal de Physique, 1968
- Collection and sputtering experiments with noble gas ionsNuclear Instruments and Methods, 1961