Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [$11\bar{2}0$] Direction
- 15 March 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 2, No) , L277-L279
- https://doi.org/10.1143/jjap.42.l277
Abstract
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