Monolithic integration of GaAs photoconductors with a field-effect transistor
- 3 July 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (14) , 753-754
- https://doi.org/10.1049/el:19860518
Abstract
A one-stage monolithic integration of a tandem pair of GaAs photoconductors (PCs) with a field-effect transistor (FET) is reported. The PC-FET exhibits a bandwidth in excess of 1 GHz and a gain of 6 dB at midband. A very low noise figure of ∼3 dB in the FET is also achieved.Keywords
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