Molecular dynamics simulation of amorphous silicon with Tersoff potential
- 1 September 1994
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 34 (1-4) , 565-570
- https://doi.org/10.1016/0927-0248(94)90086-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ab-initio molecular-dynamics of liquid and amorphous semiconductorsJournal of Non-Crystalline Solids, 1989
- Modeling solid-state chemistry: Interatomic potentials for multicomponent systemsPhysical Review B, 1989
- Radial distribution functions of amorphous siliconPhysical Review B, 1989
- Simulation of the bulk and surface properties of amorphous hydrogenated silicon deposited from silane plasmasJournal of Applied Physics, 1989
- New empirical approach for the structure and energy of covalent systemsPhysical Review B, 1988
- Glow-discharge amorphous silicon: Growth process and structureMaterials Science Reports, 1987
- Amorphous-silicon formation by rapid quenching: A molecular-dynamics studyPhysical Review B, 1987
- Monte Carlo simulations of amorphous hydrogenated silicon thin-film growthJournal of Applied Physics, 1987
- New empirical model for the structural properties of siliconPhysical Review Letters, 1986
- Substitutional doping of amorphous siliconSolid State Communications, 1975